N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Bakes wafers with resist after the development, called post-bake.
CO2 drying after release of micromachined devices
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -
Substrates in clean category: Pre-Diffusion Clean
For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Pieces need a carrier wafer; Isotropic Etching
Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Manual solvent cleaning, two ultrasonic baths.
Manual solvent cleaning, hot plate
Manual solvent cleaning of substrates or resist removal.
Wet Resist Removal: SRS-100 or PRS1000
Isotropic Si etching; can be used for backside Si removal on small pieces
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
