Skip to content Skip to navigation

"All"

The "All" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "All" category.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
ASML PAS 5500/60 i-line Stepper asml	Stepper ASML PAS 5500/60 i-line Training	"All"	SNF Paul G Allen L107 Cleanroom	5:1 reducing stepper
EVG 101 Spray Coater evgspraycoat	Spray Coater EVG 101 Training	"All"	SNF Paul G Allen L107 Cleanroom	Spray coating of resists
Flexus 2320 Stress Tester stresstest	Stress Tester Flexus 2320 Training	"All"	SNF Paul G Allen L107 Cleanroom
Headway 3 Manual Resist Spinner headway3	Resist Coat (manual) Headway 3 Training	"All"	SNF Exfab Paul G Allen 104 Stinson
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	"All"	SNF Paul G Allen L107 Cleanroom	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Heidelberg MLA 150 heidelberg	Heidelberg Training	"All"	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	"All"	SNF Paul G Allen L107 Cleanroom	Direct Write
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	"All"	SNF Paul G Allen L107 Cleanroom	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
HMDS Vapor Prime Oven, YES2 yes2	Exfab YES2 HMDS oven training	"All"	SNF Exfab Paul G Allen 104 Stinson	Singe and prime. No Resist allowed!
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align, including IR.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align.
Keyence Digital Microscope VHX-6000 keyence	Microscope Keyence Training	"All"	SNF Exfab Paul G Allen 104 Stinson
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	"All"	SNF Exfab Paul G Allen 151 Ocean
Laurell Manual Resist Spinner laurell-R	Laurell Manual Resist Spinner Training	"All"	SNF Paul G Allen L107 Cleanroom	SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	"All"	SNF Exfab Paul G Allen 151 Ocean
Mask Scrubber masksrub	Mask Scrubber Training	"All"	SNF Paul G Allen L107 Cleanroom	5 inch mask cleaning, water under pressure, no chemicals
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	"All"	SNF Exfab Paul G Allen 151 Ocean
Nanospec 210XP nanospec2	Nanospec Training	"All"	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Nanospec 3 nanospec3	Nanospec 3 Training	"All"	SNF Paul G Allen L107 Cleanroom
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers with resist after the development, called post-bake.

Pages

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Developer	Process Temperature Range	Chemicals	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
ASML PAS 5500/60 i-line Stepper asml	Photolithography > Exposure > Stepper	"All"			365 nm	5 inch								4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)	"All"						Resists						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	"All"												3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	"All"						Resists Shipley 3612 resist SPR220-3 resist SPR220-7						Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	"All"						AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	"All"			405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"			375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	"All"								150 ºC	[(CH₃)₃Si]₂NH			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
HMDS Vapor Prime Oven, YES2 yes2	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	"All"							[(CH₃)₃Si]₂NH	150 ºC						25
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	"All"			365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	"All"			365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	"All"												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement	"All"	100.00 μm - 1000.00 μm							-258 °C - 1000 °C		8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
Laurell Manual Resist Spinner laurell-R	Photolithography > Resist coat > Resist Coat (manual)	"All"						Resists SU-8 LOL			(C₅O₂H₈)_n			Pieces 2" 3" 4" 6"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	"All"										8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Mask Scrubber masksrub	Photolithography > Mask Cleaning (manual) Wet Chemical Processing	"All"				5 inch					DI Water
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	"All"												Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
Nanospec 210XP nanospec2	Characterization > Reflectometry	"All"												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Nanospec 3 nanospec3	Characterization > Reflectometry	"All"												Pieces 2" 3" 4" 6"
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake	"All"								110 ºC				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)

Pages