Annealing & Oxidation

Annealing and Oxidation are processing techniques that are performed at high temperatures. Annealing is used to change the properties of a materials that are present on your sample. Oxidation done in furnaces grows the highest quality SiO₂ available in the SNF.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Rapid Thermal Annealing	RTA AllWin 610 aw610_l		Clean	SNF Cleanroom Paul G Allen L107
Rapid Thermal Annealing	RTA AllWin 610 aw610_r		Flexible	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace)	Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide		Flexible	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Tystar Bank 1 Tube 2 B1T2 Flexible Oxide		Flexible	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace)	Tystar Bank 2 Tube 5 B2T5 Clean Anneal		Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace)	Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Clean Tube Furnace for Wet and Dry Oxidation.	Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace)	Tystar Bank 3 Tube 9 B3T9 Clean Oxide		Clean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50.00 Å - 3.00 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Rapid Thermal Annealing	RTA AllWin 610 aw610_l	Clean			Pieces 2" 3" 4" 6"	1 wafer	21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂	Pre-Diffusion Clean
Rapid Thermal Annealing	RTA AllWin 610 aw610_r	Flexible			Pieces 2" 3" 4" 6"		21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂
Oxide Growth (furnace)	Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Flexible		25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂
Oxide Growth (furnace), Annealing (furnace)	Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Flexible	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂
Oxide Growth (furnace)	Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Clean		25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂	Pre-Diffusion Clean
Oxide Growth (furnace)	Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂	Pre-Diffusion Clean
Oxide Growth (furnace)	Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂	Pre-Diffusion Clean

Techniques

Annealing & Oxidation

Technique Tabs