Silicon Dioxide

Chemical Formula:

SiO₂

There are various processing techniques to grow or deposite silicon dioxide available.

PECVD deposited silicon dioxide in the ccp system is produced by the reaction between silane (5% silane in He) and N2O. In the HDP system the reactants are silane and O2.

LPCVD deposited silicon dioxide is a high deposition rate, low temperature process (compared to thermally grown oxides). Either silane or TEOS (Tetra EthOxy Silane or Tetra Ethyl OrthoSilicate) can be used as a precursor for SiO2.

Equipment Tabs

Annealing & Oxidation Equipment

Deposition Equipment
Equipment name & Badger ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Flexible	SNF Cleanroom Paul G Allen L107	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Clean	SNF Cleanroom Paul G Allen L107	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Clean	SNF Cleanroom Paul G Allen L107	25.00 Å - 2.00 μm	SiO₂

Deposition Equipment

Deposition Equipment
Equipment name & Badger ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AJA Evaporator aja-evap	Flexible	SNF Exfab Paul G Allen 155A Venice	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti TiO₂
Fiji 1 ALD fiji1	Semiclean	SNF Cleanroom Paul G Allen L107	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ HfN HfO₂ Pt Ru SiO₂ Ta₂O₅ TaN TiN TiO₂ Various Dielectrics ZrO₂
Fiji 2 ALD fiji2	Flexible	SNF Cleanroom Paul G Allen L107	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ Ga₂O₃ HfN HfO₂ In₂O₃ In_xSn_yO_z MoO₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN TiO₂ Various Dielectrics ZrO₂
Fiji 3 ALD fiji3	Flexible	SNF Cleanroom Paul G Allen L107	1.00 Å - 50.00 nm	Al₂O₃ HfO₂ SiO₂ TiO₂ Various Dielectrics
Lesker Sputter lesker-sputter	Flexible	SNF Exfab Paul G Allen 155A Venice		Ag Al Al₂O₃ AlSi Au Co Cr Cu Fe In_xSn_yO_z Nb Ni Pd Si SiO₂ Ta Ti TiN W
Lesker2 Sputter lesker2-sputter	Semiclean	SNF Cleanroom Paul G Allen L107	1.00 μm	Ag Al Al₂O₃ AlSi Cr Ge In_xSn_yO_z Mo Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W
PlasmaTherm Shuttlelock PECVD System ccp-dep	All	SNF Cleanroom Paul G Allen L107	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	All	SNF Cleanroom Paul G Allen L107	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Flexible	SNF Cleanroom Paul G Allen L107	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Clean	SNF Cleanroom Paul G Allen L107	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Clean	SNF Cleanroom Paul G Allen L107	25.00 Å - 2.00 μm	SiO₂

Etching Equipment

Etch Equipment
Equipment name & Badger ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
AMAT P5000 Etcher p5000etch	Clean Clean (Ge) Semiclean	SNF Cleanroom Paul G Allen L107	Si Si3N4 SiGe SiO₂ SiON	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Cleanroom Paul G Allen L107	Si3N4 SiC SiO₂ PI	C
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Cleanroom Paul G Allen L107	C Si3N4 SiC SiO₂	Various C-based
Samco PC300 Plasma Etch System samco	Flexible	SNF Cleanroom Paul G Allen L107	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI
SPTS uetch vapor etch uetch	All	SNF Cleanroom Paul G Allen L107	SiO₂
Wet Bench Clean_res-hf wbclean_res-hf	Clean	SNF Cleanroom Paul G Allen L107	SiO₂
Wet Bench Flexcorr 1 wbflexcorr-1	Flexible	SNF Cleanroom Paul G Allen L107	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W

Materials

Silicon Dioxide

Equipment Tabs