Silicon Oxynitride | Stanford Nanofabrication Facility

Chemical Formula:

SiON

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Oxford Plasma Pro PECVD Ox-PECVD	Semiclean Flexible	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Shuttlelock PECVD System ccp-dep	"All"	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	"All"	SNF Paul G Allen L107 Cleanroom	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Si3N4 SiON
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Si3N4 SiON

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Flexible	SNF Paul G Allen L107 Cleanroom	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon
Samco PC300 Plasma Etch System samco	Flexible	SNF Paul G Allen L107 Cleanroom	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI