Oxford Plasma Pro PECVD (Ox-PECVD)
Overview
Ox-PECVD is a Plasma-Enhanced Chemical Vapor Deposition (PECVD) system primarily used for depositing high-quality thin films such as low-stress silicon nitride, silicon dioxide, amorphous silicon, silicon oxynitride, and silicon carbide. The tool is optimized for 4-inch wafer processing but can be configured to accommodate 6-inch and 8-inch wafers upon request. One of its key capabilities is the precise control of film stress in silicon nitride layers, which can be tuned to either compressive or tensile by adjusting the ratio of high- and low-frequency plasma power settings.
Processing Technique(s)
Capabilities and Specifications
Lab Supplied Materials
Material Thickness Range: 100.0 Å - 4.0 μm
Process Temperature Range:
200 °C - 350 °C
Gases
Substrate Type
Substrate Sizes
Maximum Load:
1
Lab Facility, Location, and NEMO Information
Location:
NEMO Area (ExFab by room):
NEMO ID:
Ox-PECVD
Training and Maintenance
Lab Facility:
Training Charges:
1.50 hours
Primary Trainer:
Backup Trainer(s):
Primary Maintenance:
Backup Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
- Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or SNF usage to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
- Contact the primary trainer: Lavendra Mandyam
