N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
5:1 reducing stepper
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
CO2 drying after release of micromachined devices
Spray coating of resists
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Direct Write
Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
1:1 Contact Aligner. Backside align, including IR.
1:1 Contact Aligner. Backside align.
