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Aixtron MOCVD - III-V system (aix200)


aix-200 MOCVD

Aixtron MOCVD for III-V and dilute nitride semiconductors: InAs, GaAs, AlAs, InP, GaP, AlP, InGaAs, AlGaAs, InGaP, InGaAsN, InPN, et al.

Aix200 is a horizontal metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-V-N system with the model of Aixtron 200/4. It is categorized as contaminated tool in general but divided into a "non-gold period" for the first couple of months after each reactor cleaning, and a "gold contaminated period" for extended experiments requirement in the next couple of months. The system can accommodate pieces, one 2-inch wafer, or one 4-inch wafer.

What the Tool CAN do

  1. Deposit III-V films (single crystal, polycrystal and quasi-amorphous), heterostructures, and nanowires
  2. Dilute nitride of III-V materials
  3. P-type and n-type doping
  4. Tightly controlled thickness from sub-nm to several micron

Capabilities and Specifications

Cleaning Required: 
Pre-Diffusion Clean
Material Thickness Range: 0.0 - 5.0 μm
Process Temperature Range: 
300 °C - 800 °C
Maximum Load: 
4"x1 wafer or 2"x1 wafer or 4 pieces

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.

Lab Organization, Location, and NEMO Information

Lab Organization: 
NEMO Area: 

Training and Maintenance

Lab Facility: 
Training Charges: 
4.00 hours
Backup Trainer(s): 
Backup Maintenance: 

Steps to become a tool user

  1. Become a member of SNF.
  1. Study the relevant operating procedures:

Operating Instructions