Overview
Aixtron MOCVD for III-V and dilute nitride semiconductors: InAs, GaAs, AlAs, InP, GaP, AlP, InGaAs, AlGaAs, InGaP, InGaAsN, InPN, et al.
Aix200 is a horizontal metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-V-N system with the model of Aixtron 200/4. It is categorized as contaminated tool in general but divided into a "non-gold period" for the first couple of months after each reactor cleaning, and a "gold contaminated period" for extended experiments requirement in the next couple of months. The system can accommodate pieces, one 2-inch wafer, or one 4-inch wafer.
What the Tool CAN do
- Deposit III-V films (single crystal, polycrystal and quasi-amorphous), heterostructures, and nanowires
- Dilute nitride of III-V materials
- P-type and n-type doping
- Tightly controlled thickness from sub-nm to several micron
Processing Technique(s)
Capabilities and Specifications
Lab Supplied Materials
Material Thickness Range:
Process Temperature Range:
Gases
Substrate Type
Substrate Sizes
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Lab Organization, Location, and NEMO Information
Training and Maintenance
Steps to become a tool user
Become a member of nano@stanford.
Become a member of SNF.
- Study the relevant operating procedures:
- Contact the primary trainer: Eli Weiss