Nitrogen | Stanford Nanofabrication Facility

Chemical Formula:

N₂

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched	Gases
Lam Research TCP 9400 Poly Etcher lampoly	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	Si	Ge SiGe	80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Paul G Allen L107 Cleanroom	Si3N4 SiC SiO₂ PI	C	Ar CF₄ CHF₃ N₂ O₂ SF₆
Oxford III-V etcher Ox-35	Flexible	SNF Paul G Allen L107 Cleanroom	GaAs	AlGaN AlInP GaN InGaP InSb	Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆
Oxford Plasma Pro ICP-RIE Ox-gen	Flexible	SNF Paul G Allen L107 Cleanroom			Ar BCl₃ CF₄ CH₄ Cl₂ H₂ N₂ O₂ SF₆
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Clean	SNF Paul G Allen L107 Cleanroom	Si Si3N4 SiO₂ Poly Silicon		Ar C₄F₈ CF₄ CHF₃ N₂ NF₃ O₂ SF₆
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Paul G Allen L107 Cleanroom	C Si3N4 SiC SiO₂	Various C-based	Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Flexible	SNF Paul G Allen L107 Cleanroom	Metals or metal compounds with volatile byproducts Al	GaN	Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆
Xactix Xenon Difluoride Etcher xactix	"All"	SNF Paul G Allen L107 Cleanroom	Ge Si SiGe		N₂ XeF₂

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Aixtron MOCVD - III-N system aix-ccs	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA	0.00 - 5.00 μm	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN
Aixtron MOCVD - III-V system aix200	Flexible	SNF MOCVD Paul G Allen 213XA	0.00 - 5.00 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN
AMAT Centurion Epitaxial System epi2	Clean	SNF Paul G Allen L107 Cleanroom	50.00 Å - 3.00 μm	Ge Si SiGe
Fiji 1 ALD fiji1	Semiclean	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ HfN HfO₂ Pt Ru SiO₂ Ta₂O₅ TaN TiN TiO₂ Various Dielectrics ZrO₂
Fiji 2 ALD fiji2	Flexible	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ Ga₂O₃ HfN HfO₂ In₂O₃ In_xSn_yO_z MoO₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN TiO₂ Various Dielectrics ZrO₂
Fiji 3 ALD fiji3	Flexible	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Al₂O₃ HfO₂ SiO₂ TiO₂ Various Dielectrics
Lesker2 Sputter lesker2-sputter	Semiclean	SNF Paul G Allen L107 Cleanroom	1.00 μm	Ag Al Al₂O₃ AlSi Cr Ge In_xSn_yO_z Mo Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W
PlasmaTherm Shuttlelock PECVD System ccp-dep	"All"	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	"All"	SNF Paul G Allen L107 Cleanroom	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
RTA AllWin 610 aw610_l	Clean	SNF Paul G Allen L107 Cleanroom
RTA AllWin 610 aw610_r	Flexible	SNF Paul G Allen L107 Cleanroom
Savannah ALD savannah	Flexible	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ Al_xZn_yO_x Ga₂O₃ HfO₂ SnO₂ TiO₂ Various Dielectrics ZnO₃ ZrO₂
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Ge Si Si SiGe
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Si Si
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂