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AMAT Centurion Epitaxial System (epi2)


Applied Materials Centura Epi2  tool in SNF

The Applied Centura Epi system allows a range of temperatures and pressures to deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films. It can also perform H2 anneals. Included gases on the tool: AsH3, B2H6, GeH4, SiClH4, SiH4, PH3.


Capabilities and Specifications

Cleaning Required: 
Pre-Diffusion Clean
Material Thickness Range: 50.0 Å - 3.0 μm
Process Temperature Range: 
600 °C - 1200 °C
Maximum Load: 

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

Lab Organization, Location, and NEMO Information

NEMO Area: 
SNF: Chemical Vapor Deposition

Training and Maintenance

Lab Facility: 
Training Charges: 
4.00 hours
Primary Trainer: 
Backup Trainer(s): 
Primary Maintenance: 

Steps to become a tool user

  1. Become a member of SNF.
  1. Study the relevant operating procedures:
  2. Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or history to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
  3. Contact the primary trainer: Neel Mehta

Operating Instructions