Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system.	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200		Flexible	SNF MOCVD Paul G Allen 213XA
Evaporation	AJA Evaporator aja-evap		Flexible	SNF Exfab Paul G Allen 155A Venice
Evaporation	AJA2 Evaporator aja2-evap	This E-beam evaporator can evaporate a variety of metals (no oxides) onto your substrates. It has an integrated ion mill for substrate precleaning.	Flexible	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system.	Semiclean	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Fiji2 is a load-locked, plasma-enabled atomic layer deposition (ALD) system. Fiji2 is currently classified as Flexible and is open to a wide range of metals and dielectrics.	Flexible	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) ALD	Fiji 3 ALD fiji3	The Fiji3 ALD system from Cambridge Nanotech/Ultratech is a plasma enabled atomic layer deposition system for deposition of restricted oxide films. The system is in the Flexible cleanliness category and allows a limited subset of gold contaminated substrates.	Flexible	SNF Cleanroom Paul G Allen L107
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Sputtering	Hummer V Sputter Coater hummer		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Evaporation	Intlvac Evaporator Intlvac_evap		Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Sputtering	Lesker Sputter lesker-sputter		Flexible	SNF Exfab Paul G Allen 155A Venice
Sputtering	Lesker2 Sputter lesker2-sputter		Semiclean	SNF Cleanroom Paul G Allen L107
Thermal ALD	MVD mvd	MVD is a molecular vapor deposition (MVD) system. It is a self assembling monolayers (SAMs)-based configuration of a Savannah S200 from Cambridge Nanotech with 1 SAMs delivery port and 4 standard atomic layer deposition (ALD) lines. The system can accommodate pieces up to an 8" wafer.	Flexible	SNF Cleanroom Paul G Allen L107
Ink	Optomec Printer optomec-printer		Flexible	SNF Exfab Paul G Allen 155A Venice
Deposition	PDMS Workbench		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.	All	SNF Cleanroom Paul G Allen L107

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Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene	Flexible	C		Pieces 2" 3" 4"	1x4" wafer or Copper/Nickel foil	800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Clean (MOCVD)	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	0.00 - 5.00 μm	Pieces 2" 4"	4"x1, 2"X3, pieces	400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄		N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200	Flexible	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	0.00 - 5.00 μm	Pieces 2" 3" 4"	4"x1 wafer or 2"x1 wafer or 4 pieces	300 °C - 800 °C	H₂ MO sources N₂ SiH₄	Pre-Diffusion Clean	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Evaporation	AJA Evaporator aja-evap	Flexible	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces				For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Evaporation	AJA2 Evaporator aja2-evap	Flexible	Ag Al Au Cr Cu Ni Pd Pt Si Ti	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces				For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50.00 Å - 3.00 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Semiclean	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Flexible	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ O₂
Plasma Enhanced (PE) ALD	Fiji 3 ALD fiji3	Flexible	SiO₂ Various Dielectrics Alumina Hafnia Titania	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂		Restricted to non-conductive films only
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube	Flexible	CNT		Pieces 2" 3" 4"	1x4" wafer or multiple pieces	800 °C - 1100 °C	Ar C₂H₅OH CH₄ H₂ O₂		Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet	Flexible	PROM Approval Required for Materials
Sputtering	Hummer V Sputter Coater hummer	Flexible
Evaporation	Intlvac Evaporator Intlvac_evap	Clean, Semiclean	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly	0.00 - 0.50 μm	Pieces 2" 3" 4" 6"	12 4 inch wafers, 2 6 inch wafers
Sputtering	Lesker Sputter lesker-sputter	Flexible	Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO		Pieces 2" 3" 4" 6"	1 4 inch wafer, 1 6 inch wafer				reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering	Lesker2 Sputter lesker2-sputter	Semiclean	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	1.00 μm	Pieces 2" 3" 4" 6"	one 4 inch wafer, one 6 inch wafer	°C - 800 °C	Ar N₂ O₂		reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Thermal ALD	MVD mvd	Flexible	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 150 °C	Ar		Reactor located inside glovebox
Ink	Optomec Printer optomec-printer	Flexible			Pieces 2" 3" 4" 6"
Deposition	PDMS Workbench	Flexible	dimethylpolysiloxane
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Flexible	poly(p-xylylene)		Pieces 2" 3" 4" 6" 8" Cones Disks Other
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	All	Si Si3N4 SiC SiO₂ SiON	100.00 Å - 4.00 μm	Pieces 4"	4	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous		To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Techniques

Deposition

Technique Tabs

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