Overview
Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-N system with a vertical closed coupled showerhead reactor, installed with a 1 by 4-inch susceptor and a 3 by 2-inch susceptor. It is categorized as contaminated tool in general but is a clean MOCVD so only accepts clean substrates. The system has been well calibrated for 4-inch wafer, while pieces and 2-inch wafer are available too.
Processing Technique(s)
Capabilities and Specifications
Lab Supplied Materials
Material Thickness Range:
Process Temperature Range:
Gases
Substrate Type
Substrate Sizes
N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Lab Organization, Location, and NEMO Information
Training and Maintenance
Steps to become a tool user
Become a member of nano@stanford.
Become a member of SNF.
- Study the relevant operating procedures:
- Contact the primary trainer: Cliff Knollenberg