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Aixtron MOCVD - III-N system (aix-ccs)


aix-ccs MOCVD

Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-N system with a vertical closed coupled showerhead reactor, installed with a 1 by 4-inch susceptor and a 3 by 2-inch susceptor. It is categorized as contaminated tool in general but is a clean MOCVD so only accepts clean substrates. The system has been well calibrated for 4-inch wafer, while pieces and 2-inch wafer are available too.


Capabilities and Specifications

Material Thickness Range: 0.0 - 5.0 μm
Process Temperature Range: 
400 °C - 1300 °C
Maximum Load: 
4"x1, 2"X3, pieces

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Lab Organization, Location, and NEMO Information

Lab Organization: 
NEMO Area: 

Training and Maintenance

Lab Facility: 
Training Charges: 
4.00 hours
Backup Trainer(s): 
Backup Maintenance: 

Steps to become a tool user

  1. Become a member of SNF.
  1. Study the relevant operating procedures:

Operating Instructions