Project Type: 
E241
Date: 
December 2017 (all day)
Areas of Interest: 
HEMTS, InAlN/GaN on Si
Report: 
MOCVD​ ​of​ ​InAlN/GaN​ ​on​ ​Si​ ​Heterostructures​ ​for High-Temperature​ ​High-Electron-Mobility​ ​Transistors (HEMTs)- Final Report
Processing Technique (former Function and Method): 
Metal-Organic (MO) CVD
Researchers and (Mentors): 
Thomas Heuser, Ricardo Peterson, (Xiaoqing Xu)
List of Important Equipment: 
Aixtron MOCVD - III-N system (aix-ccs)
Presentation: 
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation