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Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications

Project Type: 
E241
Date: 
June 2015
Areas of Interest: 
MEMS, MOCVD, GaN, AlN, AlGaN, development of wet etch chemistry for AlGaN
Report(s): 
Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report
Processing Technique (former Function and Method): 
Metal-Organic (MO) CVD
Researchers and (Mentors): 
Caitlin Chapin, Karen Dowling, (Xiaoxing Xu)
List of Important Equipment: 
Aixtron MOCVD - III-N system (aix-ccs)
Presentation(s): 
Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation