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InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

Project Type: 
E241
Date: 
June 2018
Areas of Interest: 
Green LED
Report(s): 
InGaN–GaN Multiple Quantum Wells for Green LEDs on Si- Final Report
Processing Technique (former Function and Method): 
Metal-Organic (MO) CVD
Researchers and (Mentors): 
Ben Reeves, Ze Zhang, (Xiaoqing Xu)
List of Important Equipment: 
Aixtron MOCVD - III-N system (aix-ccs)
Nano Nugget(s): 

White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

This phenomenon is known as ‘green gap’.  This document provides a brief background into the technical challenges that inspired the Green Gap E241 project.

 

Presentation(s): 
InGaN–GaN Multiple Quantum Wells for Green LEDs on Si- Final Presentation