InGaN-GaN Multiple Quantum Wells for Green LEDs on Si | Stanford Nanofabrication Facility

Project Type:

E241

Date:

June 2018 (all day)

Areas of Interest:

Green LED

Report:

InGaN–GaN Multiple Quantum Wells for Green LEDs on Si- Final Report

Processing Technique (former Function and Method):

Metal-Organic (MO) CVD

Researchers and (Mentors):

Ben Reeves, Ze Zhang, (Xiaoqing Xu)

List of Important Equipment:

Aixtron MOCVD - III-N system (aix-ccs)

Nano Nugget:

White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

This phenomenon is known as ‘green gap’. This document provides a brief background into the technical challenges that inspired the Green Gap E241 project.

Read more about White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

Presentation:

InGaN–GaN Multiple Quantum Wells for Green LEDs on Si- Final Presentation