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P-GaN/AlGAN/GaN E-mode HEMT

Project Type: 
E241
Date: 
March 2019
Areas of Interest: 
MOCVD, HEMT
Report(s): 
E241 Project P-GaN/AlGAN/GaN E-mode HEMT Final Report
Processing Technique (former Function and Method): 
Metal-Organic (MO) CVD
Researchers and (Mentors): 
Seungbin Jeong, Anand Lalwani, (Xiaoqing Xu), (Caitlin Chapin), (Don Gardner), (Dong Lee)
List of Important Equipment: 
Aixtron MOCVD - III-N system (aix-ccs)
Oxford III-V etcher (Ox-35)
Nano Nugget(s): 
photo of aix-ccs susceptor

Standard Operating Procedure for MOCVD aix-ccs

This document describes things you need to check before operating the Stanford MOCVD aix-ccs tool for safety and correct operation.