Oxford III-V etcher (Ox-35)
Overview
The Oxford III-V Etcher (Ox-35) is an inductively-coupled plasma (ICP) reactive ion etcher (RIE), designed for etching III-V semiconductors. The Oxford III-V Etcher is currently approved to etch GaAs, InGaAs, InAs, InP, InGaAsP, GaP and Si only.
Cleanliness:
Processing Technique(s)
Capabilities and Specifications
Primary Materials Etched
Other Materials Etched
Gases
Substrate Sizes
Maximum Load:
1
Notes:
Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Lab Organization, Location, and NEMO Information
Lab Organization:
Location:
NEMO Area:
SNF: Dry Etching
NEMO ID:
Ox-35
Training and Maintenance
Lab Facility:
Training Charges:
1.50 hours
Primary Trainer:
Backup Trainer(s):
Primary Maintenance:
Backup Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
- The following step Online Course is optional:
- Online Course for general information about the online training. Go to Online Nano Course Login to log in directly to the course.
Go to "nano@stanford" and then to the "Dry Etching" section for the three videos on plasma etching principles and to "Choosing a Dry Etching Process" section for guidelines for choosing the right equipment. - Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or SNF usage to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
- Contact the primary trainer: Lavendra Mandyam
