Skip to content Skip to navigation

Dry Etching of InSb Using OX-35 Etcher

Project Type: 
E241
Date: 
June 2018
Areas of Interest: 
Process development of InSb etch
Report(s): 
Dry Etching of InSb Using OX-35 Etcher- Final Report
Processing Technique (former Function and Method): 
Dry Etching
Researchers and (Mentors): 
Settasit Chaikasetsin, Matthew Gutwald, Kate Lee, (Usha Raghuram), (Jim McVittie)
List of Important Equipment: 
Oxford III-V etcher (Ox-35)
Nano Nugget(s): 

Addressing Grassing and Overetch in SiO2 Hardmask

Troubleshooting tips for roughened surfaces after etch (also called grassing or line edge roughness).

Presentation(s): 
Dry Etching of InSb Using OX-35 Etcher- Final Presentation