Skip to content
Skip to navigation
Stanford Nanofabrication Facility
Lab User Guide
Navigation menu
Guide Main Menu
SNF Home
Guide Home
Guide Home Overview
Lab Spaces
Techniques
Overview
Processing Techniques
Projects
Nano Nuggets
Processes
Runsheets
Safety & Policies
Overview
SNF Lab Manual
Safety Training
SDS
Mavericks (ExFab Room 155) Policies
Prescription Safety Glasses
Training
Overview/Equipment List
Training Calendar
Training Course Online
Training Shadowing Form
Training Videos
All Litho class
Materials
Overview
Chemicals & Materials
Cleanliness Groups
New Process or Material Requests (PROM)
Chemicals List
Materials List
Gases List
Useful Links
Run NEMO (login required)
NEMO User Guide
Events
External Links
Wafer Dopant and Resistivity Specs
Face shield cleaning using steamer
Tool Monitoring
People
Staff List
For Emergencies
Technical Liaisons
Consultants
Equipment
Equipment Name Table
Characterization (link to Processing Techniques)
CVD (link to Processing Techniques)
Doping (link to Processing Techniques)
Dry Etch (link to Processing Techniques)
Metallization (link to Processing Techniques)
Oxidation and Annealing (link to Processing Techniques)
Photolithography (link to Processing Techniques)
Wet Chemical Processing (link to Processing Techniques)
Materials
Overview
Chemicals & Materials
Cleanliness Groups
New Process or Material Requests (PROM)
Chemicals List
Materials List
Gases List
Aluminum Nitride
Chemical Formula:
AlN
Equipment Tabs
Deposition Equipment
Equipment name or Badger ID
Partial words okay.
Deposition Equipment
Equipment name & Badger ID
Cleanliness
Location
Material Thickness Range
Approved Materials supplied by Lab
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
SNF MOCVD Paul G Allen 213XA
0.00
-
5.00 μm
AlGaN
AlN
GaN
III-N materials
InAlN
InGaAlN
InGaN
InN
Projects
Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report
-- (Report)
Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation
-- (Presentation)
Improve the performance of MOCVD grown GaN-on-Si HEMT structure