Silicon Germanium

Chemical Formula:

SiGe

A deposited layer of SiGe. The ratio of Si to Ge can be controlled and will vary depending on the application.

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AMAT Centurion Epitaxial System epi2	Clean	SNF Paul G Allen L107 Cleanroom	50.00 Å - 3.00 μm	Ge Si SiGe

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AMAT Centurion Epitaxial System epi2	Clean	SNF Paul G Allen L107 Cleanroom	50.00 Å - 3.00 μm	Ge Si SiGe
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Ge Si Si SiGe

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
Lam Research TCP 9400 Poly Etcher lampoly	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	Si	Ge SiGe
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia
Xactix Xenon Difluoride Etcher xactix	"All"	SNF Paul G Allen L107 Cleanroom	Ge Si SiGe