Silicon | Stanford Nanofabrication Facility

Chemical Formula:

Single Crystal Silicon (LPCVD): Growing silicon layer with a continuous single crystal lattice structure. (epi2)

PolySi (LPCVD): PolySi Polysilicon can be deposited using the processing technique LPCVD. Polysilicon layers do not have a continuous structure (unlike single crystal continuous layers). (epi2, Thermcopoly, Thermocopy 2)

Amorphous Silicon (LPCVD): Poly crystalline or amorphous silicon is deposited by low pressure chemical vapor deposition at temperatures between 550-800C and silane as the precursor for Thermcopoly. Temperatures between 600C-1150C, Silane and dichlorosilane as precirsor for Epi2. By adding sopants to the reaction mxture, doped Si can be deposited as well. (epi2, ThermcoPoly1, ThermcoPoly2)

Amorphous Silicon (PECVD): a-Si is deposited at low temperatures in PECVD (200C - 350C) and HDPCVD (50C - 140C). 5% Silane or 100% Silane used as the precursor for depositing amorphous silicon onto substrates in the PECVD system. (CCP-dep, hdpcvd)

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AMAT Centurion Epitaxial System epi2	Clean	SNF Paul G Allen L107 Cleanroom	50.00 Å - 3.00 μm	Ge Si SiGe

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AMAT Centurion Epitaxial System epi2	Clean	SNF Paul G Allen L107 Cleanroom	50.00 Å - 3.00 μm	Ge Si SiGe
Intlvac Evaporator Intlvac_evap	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	0.00 - 0.50 μm	Al Co Cr Ge Hf Mo Nb Ni Pd Si Ta Ti V W Zr
Lesker Sputter lesker-sputter	Flexible	SNF Exfab Paul G Allen 155A Venice		Ag Al Al₂O₃ AlSi Au Co Cr Cu Fe In_xSn_yO_z Nb Ni Pd Si SiO₂ Ta Ti TiN W
Lesker2 Sputter lesker2-sputter	Semiclean	SNF Paul G Allen L107 Cleanroom	1.00 μm	Ag Al Al₂O₃ AlSi Cr Ge In_xSn_yO_z Mo Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W
Oxford Plasma Pro PECVD Ox-PECVD	Semiclean Flexible	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Shuttlelock PECVD System ccp-dep	"All"	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	"All"	SNF Paul G Allen L107 Cleanroom	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Ge Si Si SiGe
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Si Si

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
Lam Research TCP 9400 Poly Etcher lampoly	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	Si	Ge SiGe
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Flexible	SNF Paul G Allen L107 Cleanroom	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Clean	SNF Paul G Allen L107 Cleanroom	Si Si3N4 SiO₂ Poly Silicon
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Flexible	SNF Paul G Allen L107 Cleanroom	Si
Samco PC300 Plasma Etch System samco	Flexible	SNF Paul G Allen L107 Cleanroom	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI
Wet Bench Flexcorr 1 wbflexcorr-1	Flexible	SNF Paul G Allen L107 Cleanroom	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W
Xactix Xenon Difluoride Etcher xactix	"All"	SNF Paul G Allen L107 Cleanroom	Ge Si SiGe