Oxford Plasma Pro ICP-RIE Ox (Ox-Ox)
Overview
Oxford ICP-RIE Oxide Etcher (Ox-Ox) is an Inductively Coupled Plasma (ICP) etch system optimized for high-precision etching of silicon-based materials, primarily using fluorine (F)-based chemistries. Located in the SNF Cleanroom, the tool supports single-wafer processing for 4", 6", and 8" wafers and is equipped with a load-lock to minimize contamination and improve throughput. It is categorized within the “Clean” cleanliness group at SNF, making it suitable for a wide range of process development and research applications.
Cleanliness:
Processing Technique(s)
Capabilities and Specifications
Primary Materials Etched
Process Temperature Range:
-20 °C - 40 °C
Gases
Substrate Type
Substrate Sizes
Maximum Load:
1
Lab Facility, Location, and NEMO Information
Location:
NEMO Area (ExFab by room):
NEMO ID:
Ox-Ox
Training and Maintenance
Lab Facility:
Training Charges:
1.50 hours
Primary Trainer:
Backup Trainer(s):
Primary Maintenance:
Backup Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
- Online Course for general information about the online training. Go to Online Nano Course Login to log in directly to the course.
Go to "nano@stanford" and then to the "Dry Etching" section for the three videos on plasma etching principles and to "Choosing a Dry Etching Process" section for guidelines for choosing the right equipment. - Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or SNF usage to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
- Contact the primary trainer: Lavendra Mandyam
