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SNF: Dry Etching

mr_equipment

Summary

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Oxford III-V etcher Ox-35	Oxford III-V etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Clean	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Oxford Plasma Pro ICP-RIE ALE Training	Flexible	SNF Paul G Allen L107 Cleanroom
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Plasma Therm Versaline LL ICP Deep Silicon Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Plasma Therm Versaline LL ICP Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Paul G Allen L107 Cleanroom
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	"All"	SNF Paul G Allen L107 Cleanroom	Pieces need a carrier wafer; Isotropic Etching
Technics Asher technics	Technics Asher Training	Flexible	SNF Paul G Allen L107 Cleanroom
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	"All"	SNF Paul G Allen L107 Cleanroom	Isotropic Si etching; can be used for backside Si removal on small pieces

Specifications

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Clean, Semiclean	Resist	PI		O₂	4"	(Si)	25
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe		80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	PI		O₂	4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia		Ar CHClF₂ CHF₃ O₂ SF₆	Pieces 2" 3" 4" 6"		1
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Si3N4 SiC SiO₂ PI	C		Ar CF₄ CHF₃ N₂ O₂ SF₆	4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Oxford III-V etcher Ox-35	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	GaAs	AlGaN AlInP GaN InGaP InSb		Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆	4"		1
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean			-10 °C - 60 °C	BCl₃ CF₄ Cl₂ O₂ SF₆	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	1
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon	0 °C - 40 °C	Ar BCl₃ C₄F₈ Cl₂ H₂ HBr O₂ SF₆	Pieces 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (III-V)	1
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	Si			Ar C₄F₈ O₂ SF₆	4" 6"		1
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	C Si3N4 SiC SiO₂	Various C-based		Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂	4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	Metals or metal compounds with volatile byproducts Al	GaN		Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆	4" 6"		1
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI	20 ºC	CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
SPTS uetch vapor etch uetch	Etching > Vapor Etching	"All"	SiO₂			C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal	Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI		O₂	Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Xactix Xenon Difluoride Etcher xactix	Etching > Vapor Etching	"All"	Ge Si SiGe			N₂ XeF₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Oxford III-V etcher Ox-35	Oxford III-V etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Clean	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Oxford Plasma Pro ICP-RIE ALE Training	Flexible	SNF Paul G Allen L107 Cleanroom
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Plasma Therm Versaline LL ICP Deep Silicon Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Plasma Therm Versaline LL ICP Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Paul G Allen L107 Cleanroom
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	"All"	SNF Paul G Allen L107 Cleanroom	Pieces need a carrier wafer; Isotropic Etching
Technics Asher technics	Technics Asher Training	Flexible	SNF Paul G Allen L107 Cleanroom
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	"All"	SNF Paul G Allen L107 Cleanroom	Isotropic Si etching; can be used for backside Si removal on small pieces

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Clean, Semiclean	Resist	PI		O₂	4"	(Si)	25
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe		80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	PI		O₂	4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia		Ar CHClF₂ CHF₃ O₂ SF₆	Pieces 2" 3" 4" 6"		1
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Si3N4 SiC SiO₂ PI	C		Ar CF₄ CHF₃ N₂ O₂ SF₆	4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Oxford III-V etcher Ox-35	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	GaAs	AlGaN AlInP GaN InGaP InSb		Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆	4"		1
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean			-10 °C - 60 °C	BCl₃ CF₄ Cl₂ O₂ SF₆	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	1
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon	0 °C - 40 °C	Ar BCl₃ C₄F₈ Cl₂ H₂ HBr O₂ SF₆	Pieces 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (III-V)	1
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	Si			Ar C₄F₈ O₂ SF₆	4" 6"		1
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	C Si3N4 SiC SiO₂	Various C-based		Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂	4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	Metals or metal compounds with volatile byproducts Al	GaN		Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆	4" 6"		1
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI	20 ºC	CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
SPTS uetch vapor etch uetch	Etching > Vapor Etching	"All"	SiO₂			C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal	Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI		O₂	Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Xactix Xenon Difluoride Etcher xactix	Etching > Vapor Etching	"All"	Ge Si SiGe			N₂ XeF₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1