N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
5:1 reducing stepper
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
CO2 drying after release of micromachined devices
Spray coating of resists
Restricted to non-conductive films only
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Direct Write
