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Silicon

Chemical Formula:

Si

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Tystar LPCVD Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Tystar LPCVD Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist should have been removed
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist as mask allowed
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist will be removed
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching
Wet Bench Decontamination wbdecon	Wet Bench Decontamination Training	Clean	SNF Cleanroom Paul G Allen L107	KOH or wafersaw or post-cmp decontamination
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Wet Bench Flexcorr 2 wbflexcorr-2	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	420 °C - 630 °C		B₂H₆ GeH₄ N₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm	300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	420 °C - 630 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	420 °C - 630 °C		B₂H₆ GeH₄ N₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean					50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean					50:1 HF 6:1 BOE SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching Wet Chemical Processing		Clean	Si3N4						3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching Wet Chemical Processing		Clean	SiO₂				20:1 BOE 50:1 HF 6:1 BOE		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Clean					9:1 Piranha		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench CMOS Metal wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Wet Chemical Processing		Semiclean	Al Ti W				20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Decontamination wbdecon	Cleaning > Decontamination Wet Chemical Processing		Clean					SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Flexcorr 1 wbflexcorr-1	Etching > Wet Etching > Acid or Base Wet Etching Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Cleaning > Decontamination Cleaning > Metal Clean Cleaning > Piranha Cleaning Etching > Wet Etching > Silicon Oxide Wet Etching Etching > Wet Etching > Silicon Wet Etching Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W			Acids Bases Gold Etchant 20:1 BOE 50:1 HF 6:1 BOE 9:1 Piranha Al-Etch Chrome Etch KOH SC1 SC2		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 2 wbflexcorr-2	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible					Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 3 wbflexcorr-3	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible					Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various)

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