The Wet Bench Clean-1 and 2 is used for cleaning 3", 4", and 6" silicon, silicon germanium, or quartz wafers prior to processing in diffusion furnaces, LPCVD furnaces or before metal deposition. The cleans performed here are high quality, final cleans which precede high temperature processing. To be processed at this station, wafers may not contain or have ever contained any metals, nor been exposed to equipment which may pose this contamination risk. This station contains 2 sets of SC1 (5:1:1 H2O:H2O2:NH4OH) for removal of trace organics and SC2 (5:1:1 H2O:H2O2:HCl) for removal of trace metal ions, HF tanks (50:1 HF, and 6:1 BOE) for oxide etching in addition to dump rinse and spin-rinse-dry modules.
No resist allowed. Resist should have been removed at the wbclean_res-piranha