Overview
The Wet Bench Clean-1 and 2 is used for cleaning 3", 4", and 6" silicon, silicon germanium, or quartz wafers prior to processing in diffusion furnaces, LPCVD furnaces or before metal deposition. The cleans performed here are high quality, final cleans which precede high temperature processing. To be processed at this station, wafers may not contain or have ever contained any metals, nor been exposed to equipment which may pose this contamination risk. This station contains 2 sets of SC1 (5:1:1 H2O:H2O2:NH4OH) for removal of trace organics and SC2 (5:1:1 H2O:H2O2:HCl) for removal of trace metal ions, HF tanks (50:1 HF, and 6:1 BOE) for oxide etching in addition to dump rinse and spin-rinse-dry modules.
Processing Technique(s)
Capabilities and Specifications
Process Temperature Range:
Substrate Type
Substrate Sizes
No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Lab Organization, Location, and NEMO Information
Training and Maintenance
Steps to become a tool user
Become a member of nano@stanford.
Become a member of SNF.
- Study the relevant operating procedures:
Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or SNF usage to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
For upcoming training check the Training dashboard (login required).
- Contact the primary trainer: Uli Thumser