PlasmaTherm Versaline HDP CVD System (hdpcvd)
Overview
High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) is an alternative to the conventional methods of the deposition of silicon dioxide, silicon nitride and amorphous silicon using PECVD. The advantage of HD PECVD over PECVD is the ability to produce higher quality films at lower temperatures, less than 150C.
Cleanliness:
Processing Technique(s)
Capabilities and Specifications
Lab Supplied Materials
Material Thickness Range: 500.0 Å - 4.0 μm
Process Temperature Range:
50 °C - 150 °C
Gases
Substrate Sizes
Maximum Load:
1
Notes:
To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -
Substrates in clean category: Pre-Diffusion Clean
For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Lab Organization, Location, and NEMO Information
Lab Organization:
Location:
NEMO Area:
SNF: Chemical Vapor Deposition
NEMO ID:
hdpcvd
Training and Maintenance
Lab Facility:
Training Charges:
1.00 hours
Primary Trainer:
Backup Trainer(s):
Primary Maintenance:
Backup Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
- Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or history to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
- Contact the primary trainer: Lavendra Mandyam
