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SNF: Chemical Vapor Deposition

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Equipment name & NEMO ID Training Required & Charges Cleanliness Location Notes
AMAT Centurion Epitaxial System
epi2 		Epitaxial AMAT Centurion Training Clean SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
PlasmaTherm Shuttlelock PECVD System
ccp-dep 		PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
PlasmaTherm Versaline HDP CVD System
hdpcvd 		PlasmaTherm Versaline HDP CVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly 		Tystar LPCVD Tube Training Flexible SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Tystar LPCVD Tube Training Flexible SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Equipment name & NEMO ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
AMAT Centurion Epitaxial System
epi2
Pre-Diffusion Clean Clean
50.00 Å - 3.00 μm
600 °C - 1200 °C
1
PlasmaTherm Shuttlelock PECVD System
ccp-dep
All
100.00 Å - 4.00 μm
100 °C - 350 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(LiNb)
 4
PlasmaTherm Versaline HDP CVD System
hdpcvd
All
500.00 Å - 4.00 μm
50 °C - 150 °C
1
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
300 °C - 500 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
300 °C - 500 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
 50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
 50