Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Material Thickness Range | Materials Lab Supplied | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|
|
AMAT Centurion Epitaxial System epi2 |
Pre-Diffusion Clean | Clean |
50.00 Å -
3.00 μm
|
600 °C - 1200 °C
|
1 | |||||
|
Oxford Plasma Pro PECVD Ox-PECVD |
Semiclean, Flexible |
100.00 Å -
4.00 μm
|
200 °C - 350 °C
|
1 | ||||||
|
PlasmaTherm Shuttlelock PECVD System ccp-dep |
"All" |
100.00 Å -
4.00 μm
|
100 °C - 350 °C
|
4 | ||||||
|
PlasmaTherm Versaline HDP CVD System hdpcvd |
"All" |
500.00 Å -
4.00 μm
|
50 °C - 150 °C
|
1 | ||||||
|
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly |
Flexible |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
100 | ||||||
|
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO |
Flexible |
25.00 Å -
2.00 μm
|
300 °C - 500 °C
|
100 | ||||||
|
Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride |
Flexible |
25.00 Å -
2.00 μm
|
420 °C - 800 °C
|
50 | ||||||
|
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO |
Clean |
25.00 Å -
2.00 μm
|
300 °C - 500 °C
|
100 | ||||||
|
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 800 °C
|
50 | |||||
|
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
50 | |||||
|
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
50 |