N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
CO2 drying after release of micromachined devices
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Direct Write
Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
1:1 Contact Aligner. Backside align, including IR.
1:1 Contact Aligner. Backside align.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
