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Lithium Niobate

Chemical Formula: 
LiNb
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Equipment name & NEMO ID Training Required & Charges Cleanliness Location Notes
Fiji 2 ALD
fiji2 		ALD Fiji 1 and 2 Training Flexible SNF Paul G Allen L107 Cleanroom
Heidelberg MLA 150
heidelberg 		Heidelberg Training "All" SNF Exfab Paul G Allen 104 Stinson

Direct Write
Heidelberg MLA 150 - 2
heidelberg2 		Heidelberg Training "All" SNF Paul G Allen L107 Cleanroom

Direct Write
micromanipulator6000 IV-CV probe station
micromanipulator6000 		micromanipulator6000 IV-CV probe station Training "All" SNF Exfab Paul G Allen 151 Ocean
PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater 		Parylene Coater Training Flexible SNF Exfab Paul G Allen 155 Mavericks
PlasmaTherm Shuttlelock PECVD System
ccp-dep 		PlasmaTherm Shuttlelock PECVD System Training "All" SNF Paul G Allen L107 Cleanroom

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Profilometer AlphaStep D-300
alphastep2 		AlphaStep2 Training Flexible SNF Exfab Paul G Allen 104 Stinson
Samco PC300 Plasma Etch System
samco 		Samco Training Flexible SNF Paul G Allen L107 Cleanroom
Savannah ALD
savannah 		ALD Savannah Training Flexible SNF Paul G Allen L107 Cleanroom
SEM -Zeiss Merlin
sem-merlin 		SEM-Merlin Training "All" SNF Exfab Paul G Allen 104 Stinson
Woollam
woollam 		Woollam Training "All" SNF Paul G Allen L107 Cleanroom
Equipment name & NEMO ID Technique Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Minimum Resolution Exposure Wavelength Process Temperature Range Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
Fiji 2 ALD
fiji2
Flexible
1.00 Å - 50.00 nm
24 °C - 350 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
Heidelberg MLA 150
heidelberg
"All"
405 nm
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
 1
Heidelberg MLA 150 - 2
heidelberg2
"All"
375 nm
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
 1
micromanipulator6000 IV-CV probe station
micromanipulator6000
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(LiNb)
,
(Various)
 1x4" wafer
PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater
Flexible
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
PlasmaTherm Shuttlelock PECVD System
ccp-dep
"All"
100.00 Å - 4.00 μm
100 °C - 350 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(LiNb)
 4
Profilometer AlphaStep D-300
alphastep2
Flexible
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
 1
Samco PC300 Plasma Etch System
samco
Flexible
20 ºC
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
 Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD
savannah
Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
SEM -Zeiss Merlin
sem-merlin
"All"
0.00 mm - 35.00 mm
6 in wafer
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(LiNb)
 one
Woollam
woollam
"All"
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
 1