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Low Pressure (LP) CVD

Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon, Silicon-Germanium.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	LPCVD of TEOS Oxide.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon.	Clean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50.00 Å - 3.00 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD	Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Flexible	Ge Si SiGe Poly Silicon	25.00 Å - 2.00 μm	4" 6"	100	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Flexible	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Clean	Si3N4 SiON	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Clean	Si3N4 SiON	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	N₂ O₂ Si(OC₂H₅)₄	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Clean	Si Poly Silicon	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄	Pre-Diffusion Clean