Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

Processing Techniques Equipment name & NEMO ID Teaser Blurb Cleanliness Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2

Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.

 Clean SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly

LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon, Silicon-Germanium.

 Flexible SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

 Flexible SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride

LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.

 Flexible SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

 Clean SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride

LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.

 Clean SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS

LPCVD of TEOS Oxide.

 Clean SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly

LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon.

 Clean SNF Paul G Allen L107 Cleanroom