Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notes Stylus Tip Radius
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2 		Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly 		Flexible
25.00 Å - 2.00 μm
100
420 °C - 630 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Flexible
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride 		Flexible
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Clean
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride 		Clean
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean