Palladium | Stanford Nanofabrication Facility

Chemical Formula:

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AJA Evaporator aja-evap	Flexible	SNF Exfab Paul G Allen 155A Venice	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti TiO₂
AJA2 Evaporator aja2-evap	Flexible	SNF Paul G Allen L107 Cleanroom	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti
CHA Solutions II Evaporator cha-evap	Flexible	SNF Paul G Allen L107 Cleanroom	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti
Intlvac Evaporator Intlvac_evap	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	0.00 - 0.50 μm	Al Co Cr Ge Hf Mo Nb Ni Pd Si Ta Ti V W Zr
Lesker Sputter lesker-sputter	Flexible	SNF Exfab Paul G Allen 155A Venice		Ag Al Al₂O₃ AlSi Au Co Cr Cu Fe In_xSn_yO_z Nb Ni Pd Si SiO₂ Ta Ti TiN W
Lesker2 Sputter lesker2-sputter	Semiclean	SNF Paul G Allen L107 Cleanroom	1.00 μm	Ag Al Al₂O₃ AlSi Cr Ge In_xSn_yO_z Mo Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia