Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Material Thickness Range | Materials Lab Supplied | Minimum Resolution | Exposure Wavelength | Mask Size | Max Exposure Area | Resist | Developer | Process Temperature Range | Chemicals | Gases | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Aixtron Black Magic graphene CVD furnace aixtron-graphene |
Flexible |
800 °C - 1100 °C
|
, |
1x4" wafer or Copper/Nickel foil | |||||||||||||
Aixtron MOCVD - III-N system aix-ccs |
Clean (MOCVD) |
0.00 -
5.00 μm
|
400 °C - 1300 °C
|
, , , |
4"x1, 2"X3, pieces | ||||||||||||
Aixtron MOCVD - III-V system aix200 |
Pre-Diffusion Clean | Flexible |
0.00 -
5.00 μm
|
300 °C - 800 °C
|
, , , |
4"x1 wafer or 2"x1 wafer or 4 pieces | |||||||||||
AJA Evaporator aja-evap |
Flexible |
0.00 -
300.00 nm
|
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4"x3 or 6"x1 wafers or pieces | |||||||||||||
AJA2 Evaporator aja2-evap |
Flexible |
0.00 -
300.00 nm
|
, , , , , |
4"x3 or 6"x1 wafers or pieces | |||||||||||||
Asylum AFM afm-asylum |
Flexible | ||||||||||||||||
CHA Solutions II Evaporator cha-evap |
Flexible |
0.00 -
300.00 nm
|
, , , , , |
4"x15 or 6"x3 wafers or pieces | |||||||||||||
Critical Point Dryer Tousimis Automegasamdri-936 cpd |
Flexible |
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|||||||||||||||
DISCO Wafer Saw DISCO wafersaw |
Flexible |
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1x4", 1x6" or 1x8" wafer, or pieces | ||||||||||||||
EVG 101 Spray Coater evgspraycoat |
All |
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1 | ||||||||||||||
EVG Contact Aligner evalign |
All |
|
350 - 450 nm | 5 inch, 7 inch | 5 inch mask = 4 inch, 7 inch mask = 6 inch |
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one piece or wafer | ||||||||||
Ex Fab Develop Wet Bench wbexfab_dev |
Flexible | ||||||||||||||||
Ex Fab Solvent Wet Bench wbexfab_solv |
Flexible | ||||||||||||||||
Fiji 1 ALD fiji1 |
Semiclean |
1.00 Å -
50.00 nm
|
24 °C - 350 °C
|
, , |
|||||||||||||
Fiji 2 ALD fiji2 |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 350 °C
|
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|||||||||||||
Fiji 3 ALD fiji3 |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 350 °C
|
, , |
|||||||||||||
Finetech Lambda flipchipbonder |
Flexible |
°C - 400 °C
|
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1 | |||||||||||||
First Nano carbon nanotube CVD furnace cvd-nanotube |
Flexible |
800 °C - 1100 °C
|
, |
1x4" wafer or multiple pieces | |||||||||||||
Headway 3 Manual Resist Spinner headway3 |
All | 1 piece or wafer | |||||||||||||||
Headway Manual Resist Spinner headway2 |
All |
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one piece or wafer |