Semiclean

The "Semiclean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Semiclean" category.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
AMAT P5000 Etcher p5000etch	Dry Etcher AMAT P5000 Training	Clean, Clean (Ge), Semiclean	SNF Cleanroom Paul G Allen L107
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Intlvac Evaporator Intlvac_evap	Evaporator Intlvac Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching
Wet Bench Resist Strip wbresstrip-1	Wet Bench Resist Strip	Clean (Ge), Semiclean, Flexible	SNF Cleanroom Paul G Allen L107	Wet Resist Removal: SRS-100 or PRS1000

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
AMAT P5000 Etcher p5000etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) > Magnetically Enhanced RIE (MERIE)	Clean, Clean (Ge), Semiclean	Si Si3N4 SiGe SiO₂ SiON	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten					80% He/ 20%O₂ Ar CF₄ CHF₃ Cl₂ HBr He N₂ NF₃ O₂ SF₆
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean			1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Clean, Semiclean	Resist	PI					O₂	4"	(Si)	25
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe					80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	°C - 800 °C		Ar N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile	Clean, Semiclean								Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Wet Bench CMOS Metal wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Wet Chemical Processing	Semiclean	Al Ti W					20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Resist Strip wbresstrip-1	Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal	Clean (Ge), Semiclean, Flexible	Resist				20 °C - 60 °C	PRS-1000 SRS-100		Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC)	25 4 inch wafers