Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Clean" category.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Aixtron MOCVD - III-N system aix-ccs	MOCVD - III-N Aixtron training	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
AMAT Centurion Epitaxial System epi2	Epitaxial AMAT Centurion Training	Clean	SNF Cleanroom Paul G Allen L107	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
AMAT P5000 Etcher p5000etch	Dry Etcher AMAT P5000 Training	Clean, Clean (Ge), Semiclean	SNF Cleanroom Paul G Allen L107
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Intlvac Evaporator Intlvac_evap	Evaporator Intlvac Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Clean	SNF Cleanroom Paul G Allen L107
RTA AllWin 610 aw610_l	AllWin 610 RTA Training	Clean	SNF Cleanroom Paul G Allen L107
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.

Pages

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron MOCVD - III-N system aix-ccs	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD		Clean (MOCVD)			0.00 - 5.00 μm	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
AMAT Centurion Epitaxial System epi2	Doping Deposition > Chemical Vapor Deposition (CVD) > EPI (CVD) Annealing & Oxidation > Hydrogen (H2) Annealing Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	Pre-Diffusion Clean	Clean			50.00 Å - 3.00 μm	Ge Si SiGe	600 °C - 1200 °C		AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	4"		1
AMAT P5000 Etcher p5000etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) > Magnetically Enhanced RIE (MERIE)		Clean, Clean (Ge), Semiclean	Si Si3N4 SiGe SiO₂ SiON	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten					80% He/ 20%O₂ Ar CF₄ CHF₃ Cl₂ HBr He N₂ NF₃ O₂ SF₆
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean			1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Clean, Semiclean	Resist	PI					O₂	4"	(Si)	25
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean, Semiclean	Si	Ge SiGe					80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	°C - 800 °C		Ar N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean					-10 °C - 60 °C		BCl₃ CF₄ Cl₂ O₂ SF₆	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	1
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean					21 °C - 1150 °C		4% H₂ in N₂ Ar N₂ NH₃ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean								Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm		300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		420 °C - 630 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		420 °C - 630 °C		B₂H₆ GeH₄ N₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean						50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25