Oxide Growth (furnace)

The process we call oxide growth is better decribed as the conversion of silicon on the surfase of a silicon wafer to silicon dioxide. Steam or oxygen is used to oxidize the surface silicon. This is done at high temperature (800 to 1100c) in an oxidation furnace.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Oxide Growth (furnace)	Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide		Flexible	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace), Annealing (furnace)	Tystar Bank 1 Tube 2 B1T2 Flexible Oxide		Flexible	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace)	Tystar Bank 2 Tube 5 B2T5 Clean Anneal		Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace)	Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Clean Tube Furnace for Wet and Dry Oxidation.	Clean	SNF Cleanroom Paul G Allen L107
Oxide Growth (furnace)	Tystar Bank 3 Tube 9 B3T9 Clean Oxide		Clean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required
Oxide Growth (furnace)	Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Flexible		25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂
Oxide Growth (furnace), Annealing (furnace)	Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Flexible	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂
Oxide Growth (furnace)	Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Clean		25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂	Pre-Diffusion Clean
Oxide Growth (furnace)	Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂	Pre-Diffusion Clean
Oxide Growth (furnace)	Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂	Pre-Diffusion Clean