The process we call oxide growth is better decribed as the conversion of silicon on the surfase of a silicon wafer to silicon dioxide. Steam or oxygen is used to oxidize the surface silicon. This is done at high temperature (800 to 1100c) in an oxidation furnace.
| Processing Technique | Equipment name & NEMO ID | Cleanliness | Materials Lab Supplied | Material Thickness Range | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Cleaning Required | Stylus Tip Radius |
|---|---|---|---|---|---|---|---|---|---|---|
| Oxide Growth (furnace) |
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
|||||
| Oxide Growth (furnace), Annealing (furnace) |
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
|||||
| Oxide Growth (furnace) |
Tystar Bank 2 Tube 5 B2T5 Clean Anneal |
Clean |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
Pre-Diffusion Clean | ||||
| Oxide Growth (furnace) |
Tystar Bank 2 Tube 6 B2T6 Clean Oxide |
Clean |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
Pre-Diffusion Clean | ||||
| Oxide Growth (furnace) |
Tystar Bank 3 Tube 9 B3T9 Clean Oxide |
Clean |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
Pre-Diffusion Clean |