Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
non contact 3D optical profiling
Manual solvent cleaning of substrates or resist removal.
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
CO2 drying after release of micromachined devices
Isotropic Si etching; can be used for backside Si removal on small pieces
Automatic development.
Automatic Resist spinning and bake
Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Pieces need a carrier wafer; Isotropic Etching
Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -
Substrates in clean category: Pre-Diffusion Clean
For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
