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Vapor Etching

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Vapor Etching	SPTS uetch vapor etch uetch	The SPTS uetch vapor system uses anhydrous HF and ethanol at reduced pressure and 45C to etch isotropically sacrificial silicon oxide layers, primarily to release silicon microstructures in MEMS devices.	All	SNF Cleanroom Paul G Allen L107
Vapor Etching	Xactix Xenon Difluoride Etcher xactix	The Xactix e-1 is a XeF2 (xenon difluoride) isotropic silicon etcher.	All	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Primary Materials Etched	Substrate Size	Maximum Load (number of wafers)	Gases	Notes
Vapor Etching	SPTS uetch vapor etch uetch	All	SiO₂	Pieces 2" 3" 4" 6" 8"	1	C₂H₅OH HF vapor	Pieces need a carrier wafer; Isotropic Etching
Vapor Etching	Xactix Xenon Difluoride Etcher xactix	All	Ge Si SiGe	Pieces 2" 3" 4" 6"	1	N₂ XeF₂	Isotropic Si etching; can be used for backside Si removal on small pieces