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Gallium Arsenide

Chemical Formula:

GaAs

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Aixtron MOCVD - III-V system aix200	MOCVD - III-V Aixtron training	Flexible	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
Profilometer Alphastep 500 alphastep	Alphastep 500 Profilometer Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	500Å to 300µm
Oven BlueM 200°C to 430°C bluem	Blue M Oven Training	Flexible	SNF Cleanroom Paul G Allen L107	Convection in N2. Cure. Programmable.
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Wet Bench Solvent Lithography lithosolv	Lithography Solvent Bench Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF Exfab Paul G Allen 151 Ocean
Nanospec 210XP nanospec2	Nanospec Training	All	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different cleanliness groups.
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic Resist spinning and bake
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Aixtron MOCVD - III-V system aix200	Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean	Flexible	0.00 - 5.00 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN							300 °C - 800 °C		H₂ MO sources N₂ SiH₄			Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Drying > CO2 Drying Wet Chemical Processing		Flexible										CO₂				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement		All														3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)		All								AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write		All					405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write		All					375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)		All									150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner		All					365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner		All					365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy		All														Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement		All	100.00 μm - 1000.00 μm								-258 °C - 1000 °C			8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		All												8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Flexible		Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean	1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly							°C - 800 °C		Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization		All														Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
Nanospec 210XP nanospec2	Characterization > Reflectometry		All														Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven (White) white-oven	Photolithography > Resist Bake > Oven Bake		Flexible									0 °C - 200 °C					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake		All									110 ºC					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake		All									90 ºC					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)

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