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Quartz

Chemical Formula: 
SiO2
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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort descending Notes
Tencor P2 Profilometer
p2 		Tencor P2 Profilometer Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Step height measurement range 500 Å to 80 µm
Wet Bench Clean_res-hf
wbclean_res-hf 		Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist as mask allowed
SPTS uetch vapor etch
uetch 		SPTS uetch vapor etch Training All SNF Cleanroom Paul G Allen L107

Pieces need a carrier wafer; Isotropic Etching
Wet Bench Flexible Solvents 1
wbflexsolv-1 		Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning, two ultrasonic baths.
HMDS Vapor Prime Oven, YES
yes 		YES Prime Oven Training All SNF Cleanroom Paul G Allen L107

Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
Prometrix Resistivity Mapping System
prometrix 		Prometrix Training All SNF Cleanroom Paul G Allen L107

3 Probe Heads for different cleanliness groups.
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide 		Tystar Atmospheric Tube Training Flexible SNF Cleanroom Paul G Allen L107
Wet Bench Flexible Solvents 2
wbflexsolv-2 		Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning, hot plate
Oven (White)
white-oven 		White Oven Training Flexible SNF Cleanroom Paul G Allen L107

For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
Flexus 2320 Stress Tester
stresstest 		Stress Tester Flexus 2320 Training All SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 5
B2T5 Clean Anneal 		Tystar Atmospheric Tube Training Clean SNF Cleanroom Paul G Allen L107
Fiji 2 ALD
fiji2 		ALD Fiji 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107
Wet Bench Decontamination
wbdecon 		Wet Bench Decontamination Training Clean SNF Cleanroom Paul G Allen L107

KOH or wafersaw or post-cmp decontamination
Oven BlueM 200°C to 430°C
bluem 		Blue M Oven Training Flexible SNF Cleanroom Paul G Allen L107

Convection in N2. Cure. Programmable.
Tystar Bank 2 Tube 6
B2T6 Clean Oxide 		Tystar Atmospheric Tube Training Clean SNF Cleanroom Paul G Allen L107
Savannah ALD
savannah 		ALD Savannah Training Flexible SNF Cleanroom Paul G Allen L107
Wet Bench Solvent Lithography
lithosolv 		Lithography Solvent Bench Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Oven 110°C post-bake
oven110 		Resist Postbake Oven 110°C Training All SNF Cleanroom Paul G Allen L107

Bakes wafers with resist after the development, called post-bake.
Intlvac Evaporator
Intlvac_evap 		Evaporator Intlvac Training Clean, Semiclean SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 9
B3T9 Clean Oxide 		Tystar Atmospheric Tube Training Clean SNF Cleanroom Paul G Allen L107

Pages

Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Resist Developer Process Temperature Range Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
RTA AllWin 610
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
 1 wafer
RTA AllWin 610
aw610_r
Flexible
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
Samco PC300 Plasma Etch System
samco
Flexible
20 ºC
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
 Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD
savannah
Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
SEM -Zeiss Merlin
sem-merlin
All
0.00 mm - 35.00 mm
6 in wafer
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(LiNb)
Sensofar S-neox
s-neox
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
SPTS uetch vapor etch
uetch
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
SVG Develop Track 1
svgdev
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Develop Track 2
svgdev2
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 1
svgcoat
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 2
svgcoat2
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
Technics Asher
technics
Flexible
(Si)
,
(SiO2)
,
(SiO2)
 Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer
p2
Clean, Semiclean
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
Tystar Bank 1 Tube 1 Anneal
B1T1 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
300 °C - 500 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 2 Tube 5
B2T5 Clean Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
(Si)
,
(SiGe)
,
(SiO2)
 50

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