The following is a list of equipment where 2 inch round substrates are allowed.
N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment.
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Spray coating of resists
Pieces need a carrier wafer; Isotropic Etching