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Quartz

Chemical Formula:

SiO2

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Paul G Allen L107 Cleanroom	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Clean	SNF Paul G Allen L107 Cleanroom
Woollam woollam	Woollam Training	"All"	SNF Paul G Allen L107 Cleanroom
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Paul G Allen L107 Cleanroom	Resist will be removed
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers after resist coating.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic development.
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Tystar LPCVD Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align.
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	"All"	SNF Paul G Allen L107 Cleanroom	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual solvent cleaning of substrates or resist removal.
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align, including IR.
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	"All"	SNF Paul G Allen L107 Cleanroom	Direct Write
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	"All"	SNF Exfab Paul G Allen 151 Ocean
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	"All"	SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	"All"	SNF Exfab Paul G Allen 151 Ocean
DISCO Wafer Saw DISCO wafersaw	Wafersaw DISCO training	Flexible	SNF Exfab Paul G Allen 159 Capitola
AJA Evaporator aja-evap	Evaporator AJA training	Flexible	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	Si3N4 SiON		420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm	SiO₂		300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si3N4 SiON		420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂		420 °C - 630 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si Poly Silicon		420 °C - 630 °C		B₂H₆ GeH₄ N₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂		400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean							50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean							50:1 HF 6:1 BOE SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching Wet Chemical Processing		Clean	Si3N4								3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching Wet Chemical Processing		Clean	SiO₂						20:1 BOE 50:1 HF 6:1 BOE		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Clean							9:1 Piranha		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench CMOS Metal wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Wet Chemical Processing		Semiclean	Al Ti W						20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Decontamination wbdecon	Cleaning > Decontamination Wet Chemical Processing		Clean							SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Flexcorr 1 wbflexcorr-1	Etching > Wet Etching > Acid or Base Wet Etching Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Cleaning > Decontamination Cleaning > Metal Clean Cleaning > Piranha Cleaning Etching > Wet Etching > Silicon Oxide Wet Etching Etching > Wet Etching > Silicon Wet Etching Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W					Acids Bases Gold Etchant 20:1 BOE 50:1 HF 6:1 BOE 9:1 Piranha Al-Etch Chrome Etch KOH SC1 SC2		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 2 wbflexcorr-2	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible							Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 3 wbflexcorr-3	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible							Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various)
Wet Bench Flexible Solvents wbflexsolv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning Cleaning > Resist Removal > Wet Resist Removal		Flexible							Isopropanol Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexible Solvents 1 wbflexsolv-1	Cleaning > Solvent Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexible Solvents 2 wbflexsolv-2	Cleaning > Solvent Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Miscellaneous wbmiscres	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing		Flexible					AZ 1:1		Developers		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)

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