Chemical Formula:
Ge
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Resist | Developer | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micromanipulator6000 IV-CV probe station micromanipulator6000 |
"All" | 1x4" wafer | |||||||||||
|
Nanospec 210XP nanospec2 |
"All" | ||||||||||||
|
Oven (White) white-oven |
Flexible |
0 °C - 200 °C
|
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|
Oven 110°C post-bake oven110 |
"All" |
110 ºC
|
|||||||||||
|
Oven 90°C prebake oven90 |
"All" |
90 ºC
|
|||||||||||
|
Oven BlueM 200°C to 430°C bluem |
Flexible |
0 °C - 430 °C
|
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|
PlasmaTherm Shuttlelock PECVD System ccp-dep |
"All" |
100.00 Å -
4.00 μm
|
100 °C - 350 °C
|
4 | |||||||||
|
Probe Station P200L Probe Station P200L |
"All" | 1 | |||||||||||
|
Profilometer Alphastep 500 alphastep |
Flexible | 1 | |||||||||||
|
Profilometer AlphaStep D-300 alphastep2 |
Flexible | 1 | |||||||||||
| Prometrix Resistivity Mapping System | 1 | ||||||||||||
|
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
Four 4" wafers or two 6" wafers and one 8" wafer | ||||||||||
|
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
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|
Sensofar S-neox s-neox |
"All" | 1 | |||||||||||
|
SPTS uetch vapor etch uetch |
"All" | 1 | |||||||||||
|
SVG Develop Track 1 svgdev |
"All" | 25 4 inch wafers | |||||||||||
|
SVG Develop Track 2 svgdev2 |
"All" | 25 4 inch wafers | |||||||||||
|
SVG Resist Coat Track 1 svgcoat |
"All" | 25 4 inch wafers | |||||||||||
|
SVG Resist Coat Track 2 svgcoat2 |
"All" | 25 4 inch wafers | |||||||||||
|
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly |
Flexible |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
100 |