Plasma Mode Etching

Plasma mode etching is a form of capacitively coupled plasma etching wherein the substrate is sitting on a grounded electrode as opposed to the powered electrode. The bias voltage at the wafer level is much lower in this mode and hence is the preferred option for damage free etching of thin films. In plasma mode etching, the two electodes are roughly of the same size.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Plasma Mode Etching, Reactive Ion Etching (RIE), Downstream/Remote Plasma Resist Removal	Samco PC300 Plasma Etch System samco	The SAMCO etcher is a multifunctional etcher that can operate in either the RIE, plasma etch or Downstream plasma modes	Flexible	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Primary Materials Etched	Other Materials Etched	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases
Plasma Mode Etching, Reactive Ion Etching (RIE), Downstream/Remote Plasma Resist Removal	Samco PC300 Plasma Etch System samco	Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI	Pieces 2" 3" 4" 6" 8" Other	Four 4" wafers or two 6" wafers and one 8" wafer	20 ºC	CF₄ O₂ SF₆