Short Name:
3"
The following is a list of equipment where 3 inch round substrates are allowed.
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Process Temperature Range | Chemicals | Gases | Sample Size Limits | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Oxford Plasma Pro ICP-RIE Ox Ox-Ox |
Clean |
-20 °C - 40 °C
|
1 | |||||||||||
|
Oxford Plasma Pro PECVD Ox-PECVD |
Semiclean, Flexible |
100.00 Å -
4.00 μm
|
200 °C - 350 °C
|
1 | ||||||||||
|
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible | |||||||||||||
|
Plasmaetch PE-50 plasma-etch |
Flexible | Multiple | ||||||||||||
|
Probe Station P200L Probe Station P200L |
"All" | 1 | ||||||||||||
|
Profilometer Alphastep 500 alphastep |
Flexible | 1 | ||||||||||||
|
Profilometer AlphaStep D-300 alphastep2 |
Flexible | 1 | ||||||||||||
| Prometrix Resistivity Mapping System | 1 | |||||||||||||
|
RTA AllWin 610 aw610_l |
Pre-Diffusion Clean | Clean |
21 °C - 1150 °C
|
1 wafer | ||||||||||
|
RTA AllWin 610 aw610_r |
Flexible |
21 °C - 1150 °C
|
||||||||||||
|
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
Four 4" wafers or two 6" wafers and one 8" wafer | |||||||||||
|
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
|||||||||||
|
SEM -Zeiss Merlin sem-merlin |
"All" |
0.00 mm -
35.00 mm
|
6 in wafer | one | ||||||||||
|
Sensofar S-neox s-neox |
"All" | 1 | ||||||||||||
|
Sinton Lifetime Tester sinton-lifetime-tester |
Flexible | |||||||||||||
|
SPTS uetch vapor etch uetch |
"All" | 1 | ||||||||||||
|
Wet Bench Clean 1 wbclean-1 |
Clean | 25 | ||||||||||||
|
Wet Bench Clean 2 wbclean-2 |
Clean | 25 | ||||||||||||
|
Wet Bench Clean_res- hotphos wbclean_res-hotphos |
Clean | |||||||||||||
|
Wet Bench Clean_res-hf wbclean_res-hf |
Clean |