Chemical Formula:
III-V
Compound materials with chemical elements from the III and V groups of the periodic table.
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Resist | Developer | Process Temperature Range | Gases | Sample Size Limits | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nanospec 210XP nanospec2 |
"All" | |||||||||||||
|
Oven (White) white-oven |
Flexible |
0 °C - 200 °C
|
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|
Oven 110°C post-bake oven110 |
"All" |
110 ºC
|
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|
Oven 90°C prebake oven90 |
"All" |
90 ºC
|
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|
Oven BlueM 200°C to 430°C bluem |
Flexible |
0 °C - 430 °C
|
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|
Oxford Plasma Pro ICP-RIE ALE Ox-ALE |
Flexible |
0 °C - 40 °C
|
1 | |||||||||||
|
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible | |||||||||||||
|
Probe Station P200L Probe Station P200L |
"All" | 1 | ||||||||||||
|
Profilometer Alphastep 500 alphastep |
Flexible | 1 | ||||||||||||
|
Profilometer AlphaStep D-300 alphastep2 |
Flexible | 1 | ||||||||||||
|
Prometrix Resistivity Mapping System prometrix |
"All" | 1 | ||||||||||||
|
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
Four 4" wafers or two 6" wafers and one 8" wafer | |||||||||||
|
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
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|
SEM -Zeiss Merlin sem-merlin |
"All" |
0.00 mm -
35.00 mm
|
6 in wafer | one | ||||||||||
|
Sensofar S-neox s-neox |
"All" | 1 | ||||||||||||
|
SPTS uetch vapor etch uetch |
"All" | 1 | ||||||||||||
|
SVG Develop Track 1 svgdev |
"All" | 25 4 inch wafers | ||||||||||||
|
SVG Develop Track 2 svgdev2 |
"All" | 25 4 inch wafers | ||||||||||||
|
SVG Resist Coat Track 1 svgcoat |
"All" | 25 4 inch wafers | ||||||||||||
|
SVG Resist Coat Track 2 svgcoat2 |
"All" | 25 4 inch wafers |